1. Gong, Y.; Guo, J.; Li, J.; Zhu, K.; Liao, M.; Liu, X.; Zhang, Q.; Gu, L.; Tang, L.; Feng, X.; Zhang, D.; Li, W.; Song, C. -L.; Wang, L.-L; Yu, P.; Chen, X.; Wang, Y.; Yao, H.; Duan, W.-H.; Xu, Y. *; Zhang, S.-C.; Ma, X. -C; Xue, Q.-K. *;He, K.*, Experimental realization of an intrinsic magnetic topological insulator.Chinese Physics Letters2019, 36 (7), 076801. 2. Li, J.; Li, Y.; Du, S. -Q.; Wang, Z.; Gu, B. -L.; Zhang, S. -C.;He, K.*; Duan, W. -H.*; Xu, Y.*, Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials.Science Advances2019, 5 (6), eaaw5685. 3. He, K.*; Xue, Q.-K.*, Quantum anomalous Hall heterostructures.National Science Review2019, 6 (2), 202-204. 4. He, K.*; Wang Y.*; Xue Q. K.*, Topological materials: quantum anomalous Hall system.Annual Review Condensed Matter Physics2018, 9, 329-344. 5. Gong, Y.; Zhu, K.; Zang, Y.; Feng, X.; Zhang, D.; Song, C.-L.; Wang, L.-L.; Li, W.; Chen, X.; Ma, X.-C.; Xue, Q.-K.; Xu, Y.;He K.*, Experimental evidence of the thickness- and electric field-dependent topological phase transitions in topological crystalline insulator SnTe(111) thin films.Nano Research2018, 11 (11), 6045–6050. 6. Jiang, G. Y.; Feng, Y.; Wu, W. X.; Li, S. R.; Bai, Y. H.; Li, Y. X.; Zhang, Q. H.; Gu, L.; Feng, X.; Zhang, D.; Song, C. L.; Wang, L. L.; Li, W.; Ma, X. C.; Xue, Q. K.; Wang, Y. Y.*;He, K.*,Quantum anomalous Hall multilayers grown by molecular beam epitaxy.Chinese Physics Letters2018, 35, 076802. 7. Ou, Y.; Liu, C.; Jiang, G.; Feng, Y.; Zhao, D.; Wu, W.; Wang, X.–X.; Li, W.; Song, C.-L; Wang, L. –L.; Wang, W.; Wu, W.; Wang, Y.*;He, K.*; Ma, X.; Xue, Q.–K.; Enhancing the quantum anomalous Hall effect by magnetic codoping in a topological insulator.Advanced Materials2017, 30 (17), 1703062. 8. Chang, C.-Z.*; Tang, P.; Feng, X.; Li, K.; Ma, X.-C.; Duan, W.*;He, K.*; Xue, Q. -K., Band engineering of Dirac surface states in topological-insulator-base van der Waals heterostructures.Physical Review Letters2015, 115 (13), 136801. 9. Feng, Y.; Feng, X.; Ou, Y.; Wang, J.; Liu, C.; Zhang, L.; Zhao, D.; Jiang, G.; Zhang, S.-C.;He, K.*; Ma, X.; Xue, Q.-K.; Wang, Y.*, Observation of the zero Hall plateau in a quantum anomalous Hall insulator.Physical Review Letters2015, 115 (12), 126801. 10. He K.*, The quantum Hall effect gets more practical.Physics2015, 8, 41. 11. Wang, Z.; Wang, J.; Zang, Y.; Zhang, Q.; Shi, J.-A.; Jiang, T.; Gong, Y.; Song, C.-L.; Ji, S.-H.; Wang, L.-L.; Gu, L.;He, K.*; Duan, W.*; Ma, X.; Chen, X.; Xue, Q.-K., Molecular beam epitaxy-grown SnSe in the rock-salt structure: an artificial topological crystalline insulator material.Advanced Materials2015, 27 (28), 4150-4154. 12. He, K.*; Wang, Y.; Xue, Q.-K., Quantum anomalous Hall effect.National Science Review2014, 1 (1), 38-48. 13. Chang, C.-Z.; Tang, P.; Wang, Y.-L.; Feng, X.; Li, K.; Zhang, Z.; Wang, Y.; Wang, L.-L.; Chen, X.; Liu, C.; Duan, W.*;He, K.*; Ma, X.-C.; Xue, Q.-K., Chemical- potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.Physical Review Letters2014, 112 (5), 056801. 14. Chang, C.-Z.; Zhang, J.; Feng, X.; Shen, J.; Zhang, Z.; Guo, M.; Li, K.; Ou, Y.; Wei, P.; Wang, L.-L.; Ji, Z.-Q.; Feng, Y.; Ji, S.; Chen, X.; Jia, J.; Dai, X.; Fang, Z.; Zhang, S.-C.;He, K.*; Wang, Y.*; Lu, L.; Ma, X.-C.; Xue, Q.-K.*, Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator.Science2013, 340 (6129), 167-170. 15. He, K.*; Ma, X.-C.; Chen, X.; Lu, L.; Wang, Y.-Y.*; Xue, Q.-K.*, From magnetically doped topological insulator to the quantum anomalous Hall effect.Chinese Physics B2013, 22 (6), 067305. 16. Zhang, J.; Chang, C.-Z.; Tang, P.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-l.; Chen, X.; Liu, C.; Duan, W.;He. K.*; Xue, Q.-K.; Ma, X.; Wang, Y.*, Topology- driven magnetic quantum phase transition in topological insulators.Science2013, 339 (6127), 1582-1586. 17. Chang, C.-Z.; Zhang, J.; Liu, M.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Qi, X.-L.; Zhang, S.-C.; Wang, Y.*;He, K.*; Ma, X.-C.; Xue, Q.-K., Thin films of magnetically doped topological insulator with carrier- independent long-range ferromagnetic order.Advanced Materials2013, 25 (7), 1065-1070. 18. Zhang, J.; Chang, C.-Z.; Zhang, Z.; Wen, J.; Feng, X.; Li, K.; Liu, M.;He, K.*; Wang, L.; Chen, X.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators.Nature Communications2011, 2(12), 574. 19. Zhang, Y.;He, K.*; Chang, C.-Z.; Song, C.-L.; Wang, L.-L.; Chen, X.; Jia, J.-F.; Fang, Z.; Dai, X.; Shan, W.-Y.; Shen, S.-Q.; Niu, Q.; Qi, X.-L.; Zhang, S.-C.; Ma, X.-C.; Xue, Q.-K.*, Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit.Nature Physics2010, 6 (8), 584-588. 20. He, K.;Takeichi, Y.; Ogawa, M.; Okuda, T.; Moras, P.; Topwal, D.; Harasawa, A.; Hirahara, T.; Carbone, C.; Kakizaki, A.; Matsuda, I.*, Direct spectroscopic evidence of spin-dependent hybridization between Rashba-split surface states and quantum- well states.Physical Review Letters2010, 104 (15), 156805. 21. He, K.*;Hirahara, T.; Okuda, T.; Hasegawa, S.; Kakizaki, A.; Matsuda, I., Spin polarization of quantum well states in Ag films induced by the Rashba effect at the surface.Physical Review Letters2008, 101 (10), 107604. 22. He, K.; Ma, L.-Y.; Ma, X.-C.; Jia, J.-F.; Xue, Q.-K.*, Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001).Applied Physics Letters2006, 88 (23), 232503. 23. He, K.; Zhang, L.; Ma, X.; Jia, J.; Xue, Q.*; Qiu, Z., Growth and magnetism of ultrathin Fe films on Pt(100).Physical Review B2005, 72 (15), 155432. |