报告题目：Oxide Nanoelectronics
报 告 人：Chang-Beom Eom, Department of Materials Science and Engineering, University of Wisconsin-Madison
报告时间：2018-07-06 10:00
报告地点：理科楼郑裕彤讲堂
报告摘要：Oxide materials are the most abundant compound in the earth’s crust and possess a wide range of electrical, optical, and magnetic properties. For instance, insulators, high quality metals, dielectrics, ferroelectrics, piezoelectrics, semiconductors, ferromagnetics, transparent conductors, superconductors, and nonlinear optic materials have all been produced using oxide materials. Oxide materials have enormous potential, particularly as the fundamental building block of a new generation of electronic devices. We create these materials by artificially layering various atoms including oxygen at the single atomic level and discovering novel properties that are likely to find applications in electronic, magnetic, optical and electromechanical devices. I will discuss how our research [1-6] played a role in understanding the fundamental solid state phenomena at the atomic scale and the discovery of new materials so that we can use them to develop new oxide nanoelectronic devices. Atomic layer control of novel oxide heterointerfaces may provide some of the answers that we need to continue the electronics revolution, particularly for nanoscale devices with new functionality that are currently being developed and can be applied to various fields.
1. “Direct observation of a two-dimensional hole gas at oxide interfaces” Nature Materials 17, 231 (2018)
2. “Deterministic and robust room–temperature exchange coupling in monodomain multiferroic BiFeO3 heterostructures”, Nature Communications, 8, 1583 (2017)
3. “Polar Metals by Geometric Design”, Nature 533, 68 (2016)
4. “Emergence of Room-temperature Ferroelectricity at Reduced Dimensions” Science, 349, 1314 (2015)
5. “Giant piezoelectricity on Si for hyper-active MEMS” Science, 334, 958 (2011)
6. “Metallic and insulating oxide interfaces controlled by electronic correlations” Science, 331, 886 (2011)
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